Ferroelectric capacitor memory devices with carbon-free Hf0.5Zr0.5O2 (HZO) ferroelectric films are fabricated and characterized. The HZO ferroelectric films are deposited by ALD at temperatures from 225 to 300°C, with HfCl4 and ZrCl4 as the precursors. Residual chlorine from the precursors is measured and studied systematically with various process temperatures. 10nm HZO films with optimal ALD growth temperature at 275°C exhibit remanent polarization of 25µC/cm2 and cycle endurance of 5×1011. Results will be compared with those from HZO films deposited with carbon containing metal-organic precursors.