In this paper, the electronic structure of selfassembled InGaN/GaN nanowire heterojunctions is investigated. By growing the "T" shaped InGaN/GaN nanowire heterojunction structure, the crystal quality of InGaN was improved, and the phase separation phenomenon of In0.5Ga0.5N nanowires was found. Firstly, it is found that the morphology of GaN self-assembled nanowires is better when the V/III ratio is 9. Then, the morphology and physical properties of InGaN/GaN nanowire heterojunctions with different in compositions were studied. It was found that with the increase of the in composition, the lateral extension of InGaN became serious and the crystal quality deteriorated. A trusted platform module with a similar mechanism but oriented to the cloud environment was proposed, which could monitor the security status of all virtual machines in the virtual group and give Validators provide a view of the trusted state of semiconductor materials.